Written in English
|Statement||by Hemendra G. Godbole.|
|The Physical Object|
|Pagination||45 leaves, bound :|
|Number of Pages||45|
bulk stacking faults in Czochralski grown Silicon. These arise as precipitate induced microdefects, formed by the interstitial oxygen. The interstitial oxygen induces defects due to the thermal stresses it is subjected to. The for-mation and nature of this class of defects in CZ silicon have been discussed in detail by et. al. . Two-step heat-treated silicon wafers have been used to determine the electrical activity of bulk stacking faults. These wafers have been processed in two different facilities to minimize the possibility that the results might depend on impurities incorporated during wafer by: Characterization of oxygen and carbon effects in silicon material and MOSFET devices (). , and , "An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy," Material letters, Capacitance and conductance deep level transient spectroscopy by using HP-IB instruments and. Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers p Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC p Photoluminescence Study of C-H and C-D Cited by: 8.
This contrast behaviour has not yet been understood. In this paper, the contrast of weak-beam images of stacking faults in silicon is studied systematically; the faults are subsequently unambiguously characterized by direct lattice imaging. Other related planar defects in silicon, stainless steel, and a copper alloy are also investigated. Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications Cited by: 3. General Properties of Bulk SiC. Authors; Authors and affiliations Majdi S, Linnros J, Pirouz P () Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC. Briddon PR () Localized electronic states around stacking faults in silicon carbide. Phys Rev B 65 Cited by: 6. Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy.
A Model for Oxygen Precipitation and Bulk Stacking Fault Formation in Silicon. Passivation and Reactivation of Copper and Zinc Acceptors by Field Drift of Lithium in p-Type GaAs. On the Structure of Er Centers in Er-Implanted Si. Composition Dependence of Arsenic Vacancy-Related Defects at MBE-Grown GaAs/Al x Ga 1-x As Interfaces ( ≤ x. The interaction between hydrogen and platinum is studied in n- and p-type silicon using deep-level transient spectroscopy. Hydrogen is introduced by wet-chemical etching or during crystal growth. High Resolution Investigation of Stacking Fault Density by HRXRD and STEM Authors: Eric G. Barbagiovanni, Alessandra Alberti, Corrado Bongiorno, Emanuele Smecca, Massimo Zimbone, Ruggero Anzalone, Grazia Litrico, Marco Mauceri, Antonino La Magna, Francesco La Via. In crystallography, a stacking fault is a type of defect which characterizes the disordering of crystallographic planes. It is thus considered a planar defect. The most common example of stacking faults is found in close-packed crystal structures. Face-centered cubic structures differ from hexagonal close packed structures only in stacking order: both structures have close-packed atomic planes with sixfold symmetry — the atoms form equilateral triangles. When stacking .